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Infrared sensors are exposed to photons in the form of light, which affect the production of electron-hole pairs. If the energy (hv) of the falling photon is greater than the energy gap (E g ) of the semiconductor material, electron-hole pairs are created near the depletion region of the diode. Due to the electric field of the junction, the generated electron-hole pairs separate from each other before recombining. The direction of the electric field in the diode forces the electrons to move towards the n-side and therefore the holes towards the p-side. An increase in the electromotive force is observed due to the increase in the number of electrons on the n-side and the number of holes on the p-side. Now, when an external load is connected to the system, current can be observed flowing through it.

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